IEC 60749-34 Ed. 1.0 b:2004

Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling

International Electrotechnical Commission , 03/10/2004

Publisher: IEC

File Format: PDF

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Description

Standard By:International Electrotechnical Commission , 03/10/2004

Published:03/10/2004

Pages:21

File Size:1 file , 510 KB

Language:English, French

Note:This product is unavailable in Ukraine, Russia, Belarus

Used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed causing rapid changes of temperature. The power cycling test is complementary to high temperature operating life.