IEC 62979 Ed. 1.0 b:2017

Photovoltaic modules - Bypass diode - Thermal runaway test

International Electrotechnical Commission , 08/10/2017

Publisher: IEC

File Format: PDF

$47.00$95.00


IEC 62979:2017 provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.

IEC 62979 Ed. 1.0 b:2017 History

IEC 62979 Ed. 1.0 en:2017
IEC 62979 Ed. 1.0 b:2017

IEC 62979 Ed. 1.0 b:2017

$47.00 $95.00

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