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IEC 63068-2 Ed. 1.0 en:2019

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

International Electrotechnical Commission , 01/30/2019

Publisher: IEC

File Format: PDF

$95.00$190.00


Standard By:International Electrotechnical Commission , 01/30/2019
Published:01/30/2019
Pages:25
File Size:1 file , 3 MB
Language:English
Note:This product is unavailable in Ukraine, Russia, Belarus
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.

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