IEC 63068-3 Ed. 1.0 b:2020

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

International Electrotechnical Commission , 07/13/2020

Publisher: IEC

File Format: PDF

$117.00$234.00


IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

More IEC Standards PDF

IEEE 1685-2009

IEEE 1685-2009

$129.00 $258.00

IEEE 1505-2010

IEEE 1505-2010

$76.00 $152.00

IEC 61000-6-3 Amd.1 Ed. 2.0 b:2010
IEC 61784-3-14 Ed. 1.0 b:2010