IEC 63275-2 Ed. 1.0 b:2022

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

International Electrotechnical Commission , 05/01/2022

Publisher: IEC

File Format: PDF

$25.00$51.00

Description

Standard By:International Electrotechnical Commission , 05/01/2022

Published:05/01/2022

Pages:24

ISBN(s):9782832201213

File Size:1 file , 900 KB

Language:English, French

Note:This product is unavailable in Ukraine, Russia, Belarus

This part of IEC 63275 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

More IEC Standards PDF

IEC 60050-541 Ed. 1.0 b:1990

$39.00 $79.00

IEC 60050-436 Ed. 1.0 b:1990

$46.00 $92.00

IEC 60050-212 Ed. 1.0 b:1990

$102.00 $204.00

IEC 60317-12 Ed. 2.0 b:1990

$20.00 $41.00